Metal gettering by defective regions in carbon-implanted silicon

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 63-68

  Kogler R ^a   Kaschny, J R ^a   Yankov, R A ^a   Werner, P ^b   Danilin, A B ^c   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c Centre for Analysis of Substances   (Russian Federation)

Author keywords

Defects; Gettering; Ion Implantation; Metal; Silicon

Indexed keywords

CARBON; ION IMPLANTATION; METALS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; ANNEALING; COPPER; CRYSTAL DEFECTS; HIGH TEMPERATURE OPERATIONS; IRON; RELAXATION PROCESSES; VACUUM APPLICATIONS;

GETTERING; HIGH TEMPERATURE; METAL GETTERING;

DEFECTS; SILICON WAFERS;

GETTERING;

EID: 4243910105     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.63     Document Type: Article

References (12)

1. D. Lecrosnier, Mud. Instrum. Methods Phys. Res. 209/210 325 (1983).
2. N.W. Cheung, C.L. Liang, B.K. Liew, R.H. Mutikainen and H. Wong Nucl. Instrum. Methods Phys. Res. B 37/38, 941 (1989).
3. P] M. Tamura, T. Ando and K. Ohyu; Nucl. Instrum. Methods Phys. Res. B 59, 572 (1991).
4. A. Agarwal, K. Christiensen, D. Venables, D.M. Maher and G.A. Rozgonyi; Appl. Phys. Lett. 69, 3899 (1996).
5. H. Wong, N.W. Cheng, P.K. Chu, J. Liu and J. W. Mayer, Appl. Phys. Lett. 52, 1023 (1988).
6. W. Skorupa, R. Kögler, K. Schmalz and H. Bartsch; Nucl. Instrum. Methods Phys. Res. B 55, 224 (1991).
7. T. Kuroi, Y. Kawasaki, S. Komori, K. Fukunato, M. Inuishi, K. Tsukamoto, H. Shinyashiki and T. Shingyoji; Jpn. J. Appl. Phys. 32, 303 (1993).
8. T. Kuroi, S. Komori, K. Fukumoto, Y. Mashiko, K. Tsukamoto and Y. Akasaka; Exteded Abstracts of the 23rd Int. Conf. on Solid State Devices and Materials 1991, p. 56 Yokohama, Japan
9. R. Kögler, M. Posselt, R.A Yankov, J.R. Kaschny, P. Wemer, A.B. Danilin and W. Skorupa Mat. Res. Soc Conf. Proc., Symposion E, Spring Meeting 1997 San Francisco; to be published
10. P. Wemer, S. Eichler, G. Marani, R. Kögler and W. Skorupa; Appl. Phys. Lett. 70, 252 (1997).
11. K. Graff; Metal Impurities in Silicon-Device Fabrication, Springer Series in Mat. Sci. Vol. 24 (1995)
12. W. Schröter, M. Seibt and D. Gilles; High-Temperature Properties of 3d Transition Elements in Si, in "Mat. Sci. & Technology" Vol. 4, Editors: R. Cahn, P. Haasen and J. Kramer, VCH Weinheim, 1991