A simulation study of long throw sputtering for diffusion barrier deposition into high aspect vias and contacts

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1414-1425

  Smy, Tom ^a   Tan, Liang ^a   Chan, K ^a   Tait, R N ^a   Broughton, James N ^a   Dew, Steven K ^a   Brett, Michael J ^b  

^a CARLETON UNIVERSITY   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Integrated circuit metallization; Semiconductor process modeling; Simulation; Sputtering

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUITS; METALLIZING; SPUTTER DEPOSITION;

SEMICONDUCTOR PROCESS MODELING;

SPUTTERING;

EID: 0032123976     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701470     Document Type: Article

References (12)

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7. J. N. Broughton, M. J. Brett, S. K. Dew, and G. Este, "Titanium sputter depostion at low pressures and long throw distances," IEEE Trans. Semiconduct. Manufact., vol. 9, p. 122, Jan. 1996.
8. B. R. Rodgers, C. J. Tracy, and T. S. Cale, "Compositional variation in sputtered Ti-W films due to re-emission," J. Vac. Sei Technol. B, vol. 12, no. 5, p. 2980, 1994.
9. T. Smy, S. K. Dew, and M. J. Brett, "Simulation of microstructure and surface profiles of thin films for VLSI metallization," MRS Bull, Special Issue on Metallization, vol. 20, no. 11, p. 1995, Nov. 1995.
10. S. K. Dew, T. Smy, and M. J. Brett, "Step coverage and compositional studies using integrated vapor-transport and film deposition models," Jpn. J. Appl. Phys., vol. 33, pt. 1, no. 2, p. 1140, 1994.
11. M. K. Sheergar, T. Smy, S. K. Dew, and M. J. Brett, "Simulation of 3-D refractory metal step coverage over contact cuts and vias using SIMBAD," J. Vac. Sei Technol. B, vol. 14, no. 4, p. 2595, 1996.
12. R. N. Tait, S. K. Dew, T. Smy, and M. J. Brett, "Density variation of tungsten films sputtered over topography," J. Appl. Phys., vol. 70, p. 4295, 1991.