Symmetric and asymmetric InGaP/lnGaAs/GaAs heterostructure MESFET's and their application to V-band amplifiers

IEICE Transactions on Electronics

Volumn E81-C, Issue 6, 1998, Pages 868-874

  Onodera, Kiyomitsu ^a   Nishimura, Kazumi ^a   Nittono, Takumi ^a   Yamane, Yasuro ^a   Yamasaki, Kimiyoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Gaas; MESFET; V band amplifier

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

V BAND AMPLIFIERS;

MESFET DEVICES;

EID: 0032092970     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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