Self-aligned InGaP/InGaAs/GaAs heterostructure MESFET technology for analog-digital hybrid type ICs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 123-126

  Sugitani, Suehiro ^a   Yamane, Yasuro ^a   Nittono, Takumi ^a   Yamazaki, Hajime ^a   Nishimura, Kazumi ^a   Yamasaki, Kimiyoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIGITAL CIRCUITS; ELECTRONS; GATES (TRANSISTOR); HETEROJUNCTIONS; HYBRID INTEGRATED CIRCUITS; ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ANALOG DIGITAL HYBRID TYPE ICS; BREAKDOWN VOLTAGE; CHANNEL EFFECT SUPPRESSION; ELECTRON VELOCITY; GATE METAL; HETEROSTRUCTURE MESFET; IMPLANTATION ANGLE; SCHOTTKY CONTACTS; SELF ALIGNED GATE; THIN CHANNEL LAYER;

MESFET DEVICES;

EID: 0028721424     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)