Reduction of unintentional impurities at the interface between epitaxial layers and GaAs substrates

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 762-766

  Nittono, Takumi ^a   Hyuga, Fumiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDIZATION; IMPURITIES; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

IMPURITIES REDUCTION;

EPITAXIAL GROWTH;

EID: 0030680044     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00505-2     Document Type: Article

References (5)

1. S. Izumi, N. Yoshida, H. Takano, K. Nishitani and M. Otsubo, J. Crystal Growth 133 (1993) 123.
2. A.M. Huber, M. Razeghi and G. Morillot, Inst. Phys. Conf. Ser. 74 (1985) 223.
3. H. Kanber, H.T. Yang and T. Zielinski, J. Crystal Growth 91 (1988) 631
4. H. Ishikawa, S. Miwa, T. Maruyama and M. Kamada, J. Appl. Phys. 71 (1992) 3898.
5. M. Hollfelder, H. Hardtdegen, U. Breuer, H. Holzbrecher, R. Carius and H. Luth, Proc. of 7th Int. Conf. on Indium Phosphide and Related Materials, Sapporo, 1995, p. 132.