Thermal stability and degradation mechanism of WSiN/InGaP Schottky diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 652-656

  Shiojima, Kenji ^a   Nishimura, Kazumi ^a   Hyuga, Fumiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OHMIC CONTACTS; PYROLYSIS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY; TUNGSTEN COMPOUNDS;

INTERFACIAL REACTIONS; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0030108227     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589152     Document Type: Article

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