D-LDD (Double Lightly-Doped Drain) structure H-MESFET for MMIC applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1997, Pages 251-254

  Yamane, Yasuro ^a   Onodera, Kiyomitsu ^a   Nittono, Takumi ^a   Nishimura, Kazumi ^a   Yamasaki, Kimiyoshi ^a   Kanda, Atsushi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HETEROJUNCTIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DOUBLE LIGHTLY DOPED DRAIN (DLDD) STRUCTURES;

MESFET DEVICES;

EID: 0030655710     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)