Influence of emitter-base junction design on collector saturation current, ideality factor, early voltage, and device switching speed of Si/SiGe HBT's

IEEE Transactions on Electron Devices

Volumn 41, Issue 2, 1994, Pages 198-203

  Gruhle, Andreas ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

COLLECTOR SATURATION CURRENT; DEVICE SWITCHING SPEED; EARLY VOLTAGE; EMITTER BASE JUNCTION DESIGN; IDEALITY FACTOR;

BIPOLAR TRANSISTORS;

EID: 0028378745     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.277379     Document Type: Article

References (13)

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12. A. Gruhle H. Kibbel E. Kasper The influence of MBE-layer design on the high frequency performance of Si/SiGe HBTs Microelectr. Εng 19 435 1992
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