1/f Noise in Self-Aligned Si/SiGe Heterojunction Bipolar Transistor

IEEE Electron Device Letters

Volumn 16, Issue 2, 1995, Pages 58-60

  Plana, R ^a   Escotte, L ^a   Roux, J P ^a   Graffeuil, J ^a   Gruhle, A ^b   Kibbel, H ^b  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHARGE CARRIERS; ELECTRIC RESISTANCE; FREQUENCIES; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO;

BASE; CUT OFF FREQUENCY; EMITTER; LOW FREQUENCY NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029254952     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.386028     Document Type: Article

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