Collector-emitter offset voltage in heterojunction bipolar transistors

Solid State Electronics

Volumn 34, Issue 3, 1991, Pages 315-321

  Mazhari, B ^a   Gao, G B ^a   Morkoc H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

CONDUCTION BAND DISCONTINUITY; EMITTER-BASE JUNCTION; HETEROJUNCTION BIPOLAR TRANSISTORS (HBT); HOMOJUNCTION BIPOLAR TRANSISTORS; JUNCTION CHARACTERISTICS; ZERO COLLECTOR CURRENT;

TRANSISTORS, BIPOLAR;

EID: 0026123545     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90190-A     Document Type: Article

References (7)

1. Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy
2. An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors