Low Frequency Noise Properties of Microwave Transistors and their Application to Circuit Design

1994 24th European Microwave Conference, EUMA 1994

Volumn 1, Issue , 1994, Pages 62-75

  Graffeuil, J ^a   Plana, R ^a  

^a UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; INTEGRATED CIRCUIT MANUFACTURE; MICROWAVE CIRCUITS; MICROWAVE DEVICES; MICROWAVES; SOFTWARE DESIGN; TIMING CIRCUITS;

ASSESSMENT TECHNIQUE; CIRCUIT DESIGNS; DESIGN RULES; LOW-FREQUENCY; LOW-FREQUENCY NOISE; MICROWAVE TRANSISTORS; NOISE MEASUREMENTS; STATE OF THE ART;

MIXER CIRCUITS;

EID: 84886934677     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1994.337198     Document Type: Conference Paper

References (133)

1. ABDALA M.A. and B.K. JONES, "The excess noise in GaAs MESFET's", Symp. Noise in physical systems, Tokyo, pp 187-191, 1991
2. ABDALA M.A. and B.K. JONES, "Correlation between trap characterisation by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs", Solid-St. Electron., vol. 35, no 12, pp 1713-1719, 1992.
3. AGARWAL K.K., "Dielectric resonator oscillators using GaAs/(Ga, AI)As heterojunction bipolar transistors", IEEE MnT-S Digest, pp 95-98, 1986.
4. BERTUCCIO G., A. LONGONI, K. RUNGE, S. LAUXTERMANN, "The HFETs in charge preamplifiers for particles physics applications", Proc. Eur. GaAs Symp., Turin, pp 85-88, 1994.
5. BLANCK H., S.L. DELAGE, S. CASSETTE, E. CHARTIER, D. FLORIOT, M.A. POISSON, C. BRYLINSKI, D. PONS, P. ROUX, P. BOURNE, P. QUENTIN, "Fully monolithic Ku and Ka-band GalnP/GaAs HBT wideband VCOs", IEEE MUT-S Digest, May 1994.
6. BLASQUEZ G., "Excess noise sources due to defects in forward biased junctions", Solid-St. Electron., vol. 21, pp 1425-1430, 1978.
7. BLASQUEZ G. and D. SAUVAGE, "Flicker noise due to minority carrier trapping in the bulk of bipolar transistors", Digest Symp. Noise in Physical Systems, 1985, Elsevier Science Publishers B.V., pp 405-407, 1986.
8. BLASQUEZ G., C. LIMSAKUL, J.P. BAILBE, A. MARTY and C. ANTARASANA, " Current noise in GaAlAs/GaAs heterojunction bipolar transistors", Digest Symp. Noise in Physical Systems, 1985, Elsevier Science Publishers B.V., pp 195-197, 1986.
9. CANFIELD P. and L. FORBES, "Supression of drain conductance transients, drain current oscillations, and low-frequency generationrecombination noise in GaAs FET's using buried channels", IEEE Trans. Electron. Devices, vol. ED-33, no 7, pp 925-928, 1986.
10. CHEN C.Y., J. BAYRUNS, R.J. BAYRUNS and N. SCHEINBERG, "Reduction of low-frequency noise in a DC - 2.5 GHz GaAs amplifier", IEEE GaAs IC Symposium, 1988.
11. CHEN S., S. TADAYON, T. HO, K. PANDE, P. RICE, J. ADAIR and M. GHAHREMANI, "U-band MMIC HBT DRO", IEEE Microwave and Guided Wave Lett., vol. 4, no 2, pp 50-52, 1994.
12. CHEN Y.K., L. FAN, D.A. HUMPHREY, A. TATE, D. SIVCO and A.Y. CHO, "Reduction of I/f Noise Current with Non-equilibrium Electron Transport in AlInAsfInGaAs Heterojunction Bipolar Transistors", Digest IEDM Symp., pp 803-806, 1993.
13. CHERTOUK M., A. CHOVET and A. CLEI, "Identification and characterization of the 1/f low-frequency noise in GaAs MESFETs grown on InP substrates", Microelectronic Engineering 19, pp 755-758, 1992.
14. COHEN L.D., "Low phase noise oscillator with flicker (1/f) noise supression circuit", IEEE MUT-S Digest, pp 1081-1084, 1992.
15. COSTA D. and J.S. HARRIS, "Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors", IEEE Trans. Electron. Devices, vol. 39, no 10, pp 2383-2394, Oct. 1992.
16. COSTA D. and A. KHATIBZADEH, ""Use of Surface Passivation Ledges and Local Negative Feedback to Reduce Amplitude Modulation Noise in AlGaAs/GaAs Heterojunction Bipolar Transistors", IEEE Microwave Guided Wave Lett., vol. 4, no 2, pp 4547, Feb. 1994.
17. COSTA D. and A. KHATIBZADEH, "A wideband AlGaAs/GaAs heterojunction bipolar transistor amplifier optimized for low near-carrier-noise applications to 18 GiHz ", IEEE MUT-S Digest, pp 1645-1648, May 1994
18. COSTA J.C, D. NGO, R. JACKSON, D.LOVELACE, N.CAMILLERI, "Modeling and measurement of 1/f noise characteristics of Silicon BJT's ", IEEE MUT-S Digest, pp 1073-1076, May 1994
19. DAS M.D. and P.K. GHOSH, "Gate current dependence of low-frequency noise in GaAs MESFET's", IEEE Elect. Dev. Lett., vol. EDL-2, no 8, pp 210-213, 1981.
20. DAY D.1, M. TRUDEAU, S.P. Mc ALISTER and C.M. HURD, "Instability and gate voltage noise in GaAs metal-semiconductor field-effect transistors", Can. J. Phys. 67, 238, 1989.
21. DAY D.J., M. TRUDEAU, S.P. Mc ALISTER and C.M. HURD, "Noise voltage and instability in GaAs devices", Appl. Phys. Lett. 52(24), pp 2034-2036, 1988.
22. DEBNEY B.T., "A theory of generation-recombination noise from the velocity saturated channel of a GaAs MESFEr", Solid-St. Electron., vol. 24, no 8, pp 703-708, 1981.
23. DIENOT 3JM, R. PLANA, M. GAYRAL and J. GRAFFEUIL, " Pulsed I-V characterization and noise measurements for an accurate HBT model ", Microwave Opt. Lett., Vol 7(2), pp 78-79, 1994
24. DIEUDONNE J.M., M. POUYSEGUR, J. GRAFFEUIL and J.L. CAZAUX, "Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET's", IEEE Trans. Electron. Devices, vol ED-33, no 5, pp 572-575, 1986.
25. DUH K.H. and A. VAN DER ZIEL, "Hooge parameters for various FET structures", IEEE Trans. Electron. Devices, vol. ED-32, no 3, pp 662-666, 1985.
26. DUH K.H., X.C. ZHU and A. VAN DER ZIEL, " Low-frequency noise in gallium arsenide MESFETs", Solid-St. Electron., vol. 27, no I1I, pp 1003-1013, 1984.
27. DUH K.H., X.C. ZHU and A. VAN DER ZIEL, "Low-frequency diffusion noise in GaAs MESFET's", IEEE Electron. Device Lett., vol. EDL-5, no 6, pp 202-204, 1984.
28. ESCOTTE. L, R. PLANA and J. GRAFFEUIL, "Evaluation of noise parameter extraction methods, " IEEE Trans. MUT, vol.41, pp369-381, 1993
29. EVERARD J.K.A., "Low noise oscillators", IEEE MU-S Digest, pp 1077-1080, 1992.
30. FOLKES P.A., "Characteristics and mechanism of I/f noise in GaAs Schottky barrier field-effect transistors", AppI. Phys. Lett. 48(5), pp 344-346, 1986.
31. FOLKES P.A., "Voltage dependence of trap-generated I/f noise in MESFETs", Solid-St. Electron., vol. 36, no 3, pp 483484, 1993.
32. FOLKES P.A., "Fluctuating deep-level trap occupancy model for Hooge's 1/f noise parameter for semiconductor resistors", AppI. Phys. Letn. 64(4), pp 487489, 1994.
33. FONGER W.H, "A deternination of 1/f noise sources in semiconductor diodes and triodes ", Transistors I, RCA, pp 239-295, 1956
34. FORBES L., P. CANFIELD, R. GLEASON and A. Mc CAMANT, "Low frequency noise in GaAs FETs", Digest Semi insulating lll-V materials, Japan, pp 392-396, 1984
35. GHOSH C. and I. BAHL, "Characteristics ofjunction field effect transistors on gallium arsenide", IEEE, pp 295-300, 1983.
36. GITLIN D., C.R. VISWANATHAN and A.A. Abidi, "Output impedance frequency dispersion and low frequency noise in GaAs MESFEts", Journal de Physique, Colloque C4, suppldment no 9, tome 49, pp C4-201-C4-204, 1988.
37. GRAFFEUIL J., J. CAMINADE, "Low-frequency noise in GaAs Schottky-gate F.E.T.S.", Electron. Len., vol. 10, no 13, pp 266-267, 1974.
38. GRAFFEUIL J., "Low frequency noise spectrum of GaAs FETS ", EL. Len., Vol 17 (11), pp 387-388, 1981
39. GRAFFEUIL J., K. TANTRARONGROJ and J.F. SAUTEREAU, "Low frequency noise physical analysis for the improvment of the spectral purity of GaAs FETs oscillators", Solid-St. Electron., vol. 25, no 5, pp 367-374, 1982.
40. GRAFFEUIL J., A. BERT, M. CAMIADE, A. AMANA and J.F SAUTEREAU, " Ultra low noise GaAs MESFET microwave oscillators ", Digest Symp. Noise in Physical Systems 83, Elsevier Science Publishers B.V., pp 329-332, 1983.
41. GREAVES S.D. and R.T. UNWIN, "The variation of short-gate-length GaAs MESFET intrinsic noise parameters with bias", Microwave Opt. Technol. Lett., vol. 6, no 16, pp 892-895, 1993.
42. GUHICH U., A. GRUHLE and J.F. LUY, "A Si-SiGe HBT dielectric resonator stabilized microstrip oscillator at X-band frequencies", IEEE Microwave and Guided Wave Lett., vol. 2, no 7, pp 281-282, 1992.
43. GUTICH U. and J. WENGER, " Low phase noise PM-HFET oscillators with dielectric stabilization for Ka- and W- band frequencies ", EMC digest, pp 394-396, Madrid 1993
44. GUTTICH U., DIEUDONNE J.M, RIEPE K., MARTEN a. and LEIER H., "Ka-band VCOs for low noise applications using GalnP/GaAs HBTs " IEEE MUT-S Digest, pp 131-134, May 1994
45. HALFORD D., WATNWRIGHT A.E. and J.A BARNES, "Flicker noise of phase in RF amplifiers and frequency multipliers: characterization, cause and cure ", Proc. 22 Annu. Symp. Freq. Contr, pp 640-641, April 68
46. HASHIGUCHI S., T. SATOH and M. OHKI, "Estimation of the effective carrier number and hooge's 1/f parameter in a HEMT", Digest Symp. Noise in Physical Systems, 1991, Elsevier Science Publishers B.V., JAPAN, pp 173-177, 1991.
47. HAYAMA N., S.R. LE SAGE, M. MADIHIAN and K. HONJO, "A low-noise Ku-band AlGaAs/GaAs HBT oscillator", IEEE MUT's Digest, pp 679-682, 1988.
48. HAYAMA N. and K. HONJO, "1/f Noise Reduction in Self-Aligned AIGaAs/GaAs HBT with AlGaAs Surface Passivation Layer", IEEE Trans. ELectron. Devices, vol. 39, no 9, pp 2180-2182, Sept. 1992.
49. HELLUMS J.R and L.M RUCKER, " Low frequency noise in gallium arsenide structures ", Solid state electron., vol 27(11), pp 949-952, 1984
50. HOFMAN F., R.J.J. ZULSTRA, J.M. BETTENCOURT DE FREITAS and J.C.M. HENNING, "Generation-recombination noise in AlXGa IxAs", Solid-St. Electron., vol. 34, no 1, pp 23-32, 1991.
51. HUGHES B., N.G. FERNANDEZ, J.M. GLADSTONE, "GaAs FET's with a flicker-noise comer below 1 MHz", IEEE Trans. Electron. Devices, vol. ED-34, no 4, pp 733-741, 1987.
52. ISHII K., YAMAMOTO t., SHiGAKI M., HONGO h. and IWATSUKI M., "An on-board 47-GIH phase locked oscillator using FET gate bias control for low phase noise ", EMC digest, pp 767-769, Madrid 1993
53. JANG S.L., "Formulation of mobility fluctuation I/f noise in bipolar junction transistors", Solid-St. Electron., vol. 36, no 11, pp 1541-1545, 1993.
54. JUE S.C, DAY D., MARGITTAI A. and SVILANS M., " Transport and noise in GaAs/AlGaAs heterojonction bipolat transistors - Part 11: Noise and gain at low frequencies ", IEEE Trans. E.D, vol 36(6), pplO20-1025, 1989
55. KHATIBZADEH M.A., GaAs IC Symposium Digest, pp.11-14, 1989
56. KHATIBZADEH M.A., B. BAYRAKTAROGLU, "Low phase noise heterojunction bipolar transistor oscillator", Elec. Lett., vol. 26, no 16, pp 1246-1247, 1990.
57. KIRTLEY J.R., T.N. THEIS, P.M. MOONEY and S.L. WRIGHT, "Noise spectroscopy of deep level (DX) centers in GaAs-AlxGai xAs heterostructures", J. AppI. Phys. 63(5), pp 1541-1548, 1988.
58. KLEINPENNING T.G.M., " I/f noise in p-n diodes ", Physica, vol 93b, pp289-299, 1980
59. KLEINPENNING T.G.M., "Location of Low-Frequency Noise Sources in Submicrometer Bipolar Transistors", IEEE Trans. Electron. Devices, vol. 39, no 6, pp 10501-1506, 1992.
60. KLEINPENNING T.G.M. and A.J. HOLDEN, "Low-frequency noise in BJTs and HBTs Influence of intemal series resistances", Microelectronic Engineering 19, pp 711-716, 1992.
61. KLEINPENNING T.G.M. and A.J. HOLDEN, " I/f Noise in n-p-n GaAs/AlGaAs Heterojunction Bipolar Transistors Impact of Intrinsic Transistor and Parasitic Series Resistances", IEEE Trans. Electron. Devices, vol. 40, no 6, pp 1148-1153, June 1993.
62. KUGLER S., "Evaluation of the trap concentration in highly doped semiconductors from low-frequency noise spectra", J. Appl. Phys. 66(1), pp 219-222, 1989.
63. KUGLER S., "Generation-recombination noise in the saturation regime of MODFET structures", IEEE Trans. Electron. devices, vol. 35, no 5, pp 623-628, 1988.
64. KUROKAWA K., "An introduction to the theory of microwave circuits ", Academic press, New York, pp 380-397, 1969
65. LANE R.Q, "The determination of device noise parameters ", Proc. IEEE, pp 1461-1462, 1969
66. LEE A.T.J., "A low-power-dissipation broadband cryogenic preamplifier utilizing GaAs MESFETs in parallel", Rev. Sci. Instrum. 64(8), pp 2373-2378, 1993.
67. LEESON D.B., "A simple model of feedback oscillator noise spectrum", Proc. IEEE, pp 329-330, 1966.
68. LESAGE S.R., M. MADIHIAN, H. HAYAMA, K. HONJO, "15.6 GHz HBT microstrip oscillator", Elec. Lett., vol. 24, no 4, pp 230-231, 1988.
69. Li Z.M., S.P. Mc ALISTER and D.J. DAY, "Analytical model of low-frequency diffusion noise in GaAs MESFETs", IEEE Trans. Electron. Devices, vol. 38, no 2, pp 232-236, 1991.
70. LIU S.M., M.B. DAS, W. KOPP and H. MORKOC, "Noise behavior of 1-pm gate-length modulation-doped FET's From ICY2 to 108 Hz" IEEE Elec. Dev. Lett., vol. EDL-6, no 9, pp 453-455, 1985.
71. LIU S.M.J., S.T. FU, M.B. DAS, K.H.G. DUH, P.C. CHAO, P.M. SMITH and J.M. BALLINGALL, "A comparison of low- and high-frequency noise spectra of 0.1 micron gate-length conventional, pseudomorphic and planar-doped MODFET structures", Digest IEDM, pp 414417, 1987.
72. LORECK L., H. DAMBKES, K. HEIME and K. PLOOG, "Deep level analysis in (AlGa)As-GaAs MODFETs by means of low frequency noise measurements", Digest IEDM, pp 107-110, 1983.
73. LU P.F., "Low-frequency noise in self-aligned bipolar transistors", J. Appl. Phys. 62(4), pp 1335-1339, Aug. 1987.
74. MADIHIAN M., N. HAYAMA, S.R. LESAGE and K. HONJO, "A low-noise microwave oscillator employing a self-aligned AlGaAs/GaAs HBT", IEEE Trans. Microwave Theory Tech., vol. 37, no 11, pp 1811-181814, 1989.
75. MADIHIAN M. and H. TAKAHASHI, "A low-noise K-Ka band oscillator using AlGaAs/GaAs heterojunction bipolar transistors", IEEE Trans. Microwave Theory Tech., vol. 39, no 1, pp 133-136, 1991.
76. MANN L.D., D.G. BLAIR, K.J. WELLINGTON, "Flicker noise in GaAs MESFET X-band amplifiers in the temperature range 300 K to 2 K", Electron. Lea., vol. 22, no 20, pp 1037-1038, 1986.
77. NG G.I., D. PAVLIDIS, M. TUUT, R.M. WEISS and P. MARSH, "Low-frequency noise characteristics of lattice-matched (x = 0.53) and strained (x > 0.53) Ino s2Al0 48As/lnxGa1 xAs HEMT's", IEEE Trans. Electron. Devices, vol. 39, no 3, pp 523-532, 1992.
78. OGAWA K., H. IKEDA, T. ISHIZAKI, K. HASHlIMOTO, Y. OTA, "25 GHz dielectric resonator oscillator using an AlGaAs/GaAs HBr", Elec. Lett., vol. 26, no 18, pp 1514-1516, 1990.
79. PAILLOT J.M, J.C NALLATAMBY, M. HESSANE., R. QUERE, M. PR1GENT and J. ROUSSET, " A general program for steady state stability and FM noise analysis of microwave oscillators ", MUT-S Digest, pp.1287-1290, 1990
80. PAWLIKIEWICZ A.H. and A. VAN DER ZIEL, "Location of 1/f Noise Sources in BJT's-II. Experiment", IEEE Trans. Electron. devices, vol. ED-34, no 9, pp 2009-2012, Sept. 1987.
81. PERANSIN J.M., P. VIGNAUD, D. RIGAUD and L.K.J. VANDAMME, "I/f noise in MODFET's at low drain bias", IEEE Trans. Electron. Devices, vol. 37, no 10, pp 2250-2253, 1990.
82. PERANSTN J.M., P. VIGNAUD, D. RIGAUD, J.M. DUMAS, "Bias dependence of low-frequency gate current noise in GaAs MESFETs", Electron. Lett., vol. 25, no 7, pp 439440, 1989.
83. PHILLIPS J.R., K. TSUBAKI, T. SAKU and S. TARUCHA, "Low-frequency noise in very high mobility modulation-doped structures", AppI. Phys. Left. 61(24), pp 2926-2928, 1992.
84. PLANA R., H. KIBBEL, A. GRUHLE, L. ESCOUTE, J.P. ROUX, 3. GRAFFEUIL, "Low-frequency noise and microwave noise parameters in Si/SiGe heterojunction bipolar transistors", ESSDERC Digest, 1993
85. PLANA R., J. GRAFFEUIL, S.L. DELAGE, H. BLANCK, M.A. DI FORTE-POISSON, C. BRYLINSKI and E. CHARTIER, "Low frequency noise in self-aligned GalnP/GaAs heterojunction bipolar transistor", Electron. Lett., vol. 28, no 25, pp 2354-2355, Dec. 1992.
86. PLANA R., L. ESCOHTE, 0. LLOPIS, H. AMINE, T. PARRA, M. GAYRAL and I. GRAFFEUIL, "Noise in AlGaAs/AnGaAs/GaAs pseudomorphic HEMT's from 10 Hz to 18 GHz", IEEE Trans. Electron. Devices, vol. 40, no 5, pp 852-858, 1993.
87. PLANA R., J.P ROUX, L. ESCOTHE, J. GRAFFEUIL, S.L DELAGE and H. BLANCK, "Excess noise in microwave GaInP/GaAs HBTs ", Proc. Eur. GaAs Symp., Turin, pp 131-134, 1994
88. PLOUCHART J.0., WANG H., RIET M. and P. BERDAGUER, "Very compact wideband HBT MMIC VCO with two-output buffer amplifier", El. lett., Vol 30(5), pp 420422, 1994
89. POUYSEGUR M, J.GRAFFEUIL and J.L CAZAUX, " Origin of I/f312 noise in GaAs resistors and MESFETs ", IEEE Trans E.D, pp 2178-2184, 1987
90. PRASAD S.J. and C. HAYNES, "First demonstration of a GaInP/GaAs HBT YIG-tuned microwave oscillator", Proc. Eur. GaAs Symp., pp 303-306, 1994.
91. PUCEL R.A. and J. CURTIS, "Near-carrier noise in FET oscillators", IEEE MUT-S Digest, pp 282-284, 1983.
92. RAMAN V.K., C.R. VISWANATHAN and M.E. KIM, "DC Conduction and Low-Frequency Noise Characteristics of GaAIAs/GaAs Single Heterojunction Bipolar Transistors at Room Temperature and Low Temperatures", IEEE Trans. Microwave Theory Tech., vol. 39, no 6, pp 1054-1058, June 1991.
93. RHODE U.L, CHANG C.R, GERBER 3. and PENGELLY R. " Parameter extraction for large signal noise models and simulation of noise in large signal circuits like mixers and oscillators ", Digest European Microwave Conf., Madrid, pp 465470, 1993
94. RIDDLE A.N. and R.J. TREW, "A new method of reducing phase noise in GaAs FET oscillators", IEEE MUT-S Digest, pp 274-276, 1984.
95. RIDDLE A.N. and R.J. TREW, "Low frequency noise measurements of GaAs FETs", IEEE MTU-S Digest, pp 79-82, 1986.
96. RIZOLLI V., F. MASTRI and D. MASOUTI, "A general-purpose harmonic-balance approach to the computation of near-carrier noise in freerunning microwave oscillators"', IEEE MUT-S Digest, pp 309-312, 1993.
97. RIZOLLI V., F. MASTRI, D. MASOUTT and A. NERI, "Full nonlinear analysis of near-carrier noise in discriminator-stabilized microwave oscillators", Microwave Opt. Technol. Lett., vol. 6, no 16, pp 907-911, 1993.
98. RIHODE U.L, " All about phase noise in oscillators ", QEX, U.S.A, Dec-Feb 94
99. ROHDIN H., C.Y. SU and C. STOLTE, "A study of the relation between device low-frequency noise and oscillator phase noise for GaAs MASECETs', IEEE MU-S Digest, pp 267-269, 1984.
100. RUCKER L.M. and J.R. HELLUMS, "Low-frequency noise characteristics of gallium arsenide MESFETs", Solid-St. Electron., vol. 27, no 11, pp. 947-948, 1984
101. ROGERS G.R, "Low phase noise oscillator design ", Artech House 1991, p 134
102. SATO R.N., M. SOKOLICH, N. DOUDOUMOPOULOS and J.R. DUFFEY, "Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenics temperatures with ultralow drain current"', IEEE Electron. Device Lett., vol. 9, no 5, pp 238-240, 1988.
103. SAUTEREAU J.F, J. GRAFFEUIL et al., "Large signal design and realization of a low noise X-band GaAs FET oscillator ", Digest 11th EMC, Varsovie, 1981
104. SAUVAGE D., M. GUEGUEN, B. SIMON, "Influence des proprietes de surface sur les parametres electriques des TEC GaAs", Ann. Telecommun., 40, no 3-4, pp83-87, 1985.
105. SODINI D., A. TOUBOUL, G. LECOY, M. SAVELLI, "Generation-recombination noise in the channel of GaAs Schottk-gate field-effect transistors", Electron. Lett, Vol 12, pp 4243, 1976
106. SRIRAM S., B. KIM, P.K. GHOSH and M.B. DAS, "Detennination of deep-level impurities and their effects on the small-signal and LF noise properties of ion-implanted GaAs MESFETs", Int. Symp. GaAs and Related Compounds, 1981.
107. STATZ H., H.A. HAUS and R.A. PUCEL, "Noise characteristics of gallium arsenide field-effect transistors", IEEE Trans. Electron. devices, vol. ED-21, no 9, pp 549-562, 1974.
108. SU C.Y., H. RODHIIN and C. STOLTE, "I/f noise in GaAs MESFETs", IEEE MU-S Digest, pp 601-604, 1983.
109. SU Y.K., S.C. SHEI and C.H. CHEN, "Low-frequency noise in InP-based NPN double heterojunction bipolar transistors", AppI. Phys. Lett. 61(13), pp 1576-1578, Sept. 1992.
110. SUH C.H., A. VAN DER ZIEL and R.P. JINDAL, "1/f noise in GaAs MESFETS", Solid-St. Electron., vol. 24, no 8, pp 717-718, 1981.
111. TACANO M. and Y. SUGIYAMA, "I/f noise in GaAs filaments"', IEEE Trans. Electron. devices, vol. 38, no 11, pp 2548-2553, 1991.
112. TACANO M. and Y. SUGIYAMA, "Comparison of 1/f noise of AlGaAs/GaAs HEMTs and GaAs MESFETs", Solid-St. Electron., vol. 34, no 10, pp 1049-1053, 1991.
113. TACANO M., Y. SUGIYAMA and H. SOGA, "Device process dependence of low-frequency noise in GaAlAs/GaAs heterostructure", Solid-St. Electron., vol. 32, no 1, pp 49-55, 1989.
114. TANAKA S., H. HAYAMA, A. FURUKAWA, T. BABA, M. MIZUTA and K. HONJO, "Low-frequency noise performance of self-aligned InAlAs/lnGaAs heterojunction bipolar transistors", Elec. Left., vol.26, no 18, pp 1439-1440, 1990.
115. TEHRANI S., A.D. VAN RHEENEN, M.M. HOOGSTRA, J.A. CURLESS and M.S. PEFFLEY, "Low-frequency noise in heterojunction FET's with low-temperature buffer", IEEE Trans. Electron. Devices, vol. 39, no 5, pp 1070-1074, 1992.
116. TI-URAIRAJ M-S., M.B. DAS, J.M. BALLINGALL, P. HO, P.C. CHAO and M.Y. KAO, "Low-frequency noise behavior of 0.1I 5 m gate-length lattice-matched and lattice-mismatched MODFErs on InP substrates", IEEE Elec. Dcv. Left., vol. 12, no 8, pp 410-412, 1991.
117. TSIRONIS C., "Influence de la technologie sur le bruit en base frdquence des transistors A effet de champ en arsdniure de gallium: importance pour des applications en amplificateur, mtlangeur et oscillateur", Acta Electronica, 25, 3, 1983.
118. TSIRONIS C., J. GRAFFEUlL, F. HENZE, Z. HADJOUB, 'Low, frequency noise in GaAs MESFETs", 1th Int. Symp. on Gallium Arsenide and Related Compounds, Biarritz, pp 611-616, 1984.
119. TUUT M.N, D. PAVLID1S and B. BAYRAKTAROGLU, "An assesment of noise sources and characteristics of AlGaAsIGaAs heterojunction bipolar transistors ", Int. Symp. GaAs and rel. comp., Japan, Inst. Phys. Conf. Ser. 106, Chapt. 9, pp 701-706, 1989
120. TUTT M.N., D. PAVLIDIS, D. PEHLKE, R. PLANA and J. GRAFFEUIL, "1/f noise in AlGaAs/GaAs HBrs using ultrasensitive characterization techniques for identifying noise mechanisms", Proc. 18th GaAs and rel. compounds symp., Seattle, USA, pp 317-322, 1991
121. TUUT M.N., D. PAVLIDIS and H.F. CHAU, "1/f noise characteristics of InP/InGaAs heterojunction bipolar transistors", 4th Int. Conf. Ind. Phosphide and Related Materials, 1992.
122. TUTT M.N., D. PAVLIDIS, A. KHATIBZADEH and B. BAYRAKTAROGLU, "Investigation of HBT Oscillator Noise Through 1/f Noise and Noise Upconversion Studies", IEEE MUT-S, pp 727-730, 1992.
123. VAN DER ZIEL A., "Thermal noise in field-effect transistors", Proceedings of the IRE, vol. 50, pp 1808-1812, 1962.
124. VAN DER ZIEL A., X. ZHANG and A.H. PAWLIKIEWICZ, "Location of 1/f Noise Sources in BJT's and HBJT's-I. Theory", IEEE Trans. Electron. Devices, vol. ED-33, no 9, pp 1371-1375, Sept. 1986.
125. VAN RHEENEN A.D, G. BOSMAN and R.J.J ZILLSTRA, " Low frequency noise measurement as a tool to analyze deep-level impurities in semiconductor devices ", Solid State Electron., vol 30(3), pp259-265, 1987
126. VAN RHEENEN A.D., S. TEHRANI, M.M. HOOGSTRA, J.A. CURLESS and M.S. PEFFLEY, "Low frequency noise in HFETs", Microwave J., pp 133-141, 1992.
127. VANDAMME L.K.J., D. RIGAUD, J.M. PERANSIN, R. ALABEDRA and 3.M. DUMAS, "Gate current 1/f noise in GaAs MESFETs", IEEE Trans. Electron. devices, vol. 35, no 7, pp 1071-1075, 1988.
128. VANDAMME L.K.J., D. RIGAUD and J.M. PERANSIN, "Coherence between gate- and drain-current fluctuations in MESFETs and MODFET's biased in the ohmic region", IEEE Trans. Electron. Devices, vol. 39, no 10, pp 2377-2382, 1992.
129. WADE T.E. and A. VAN DER ZIEL, "Noise associated with recombination in the emitter space charge region of transistors", Solid-St. Electron., vol. 19, pp 909-910, 1976.
130. WANG H., K.W. CHANG, T.H. CHEN, K.L. TAN, G.S. DOW, B. ALLEN and J. BERENZ, "Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs", IEEE GaAs IC Symp., pp 47-50, 1992.
131. YAMAUCH1 Y., H. KAMITSUNA, M. NAKATSUGAWA, H. ITO, M. MURAGUCHI and K. OSAFUNE, "A 15 GHz monolithic low-phasenoise VCO using AlGaAs/GaAs HBT technology", IEEE J. Solid-St. Circuits, vol. 27, no I0, pp 1444-1447, 1992.
132. YANG S., T. MIZUNAMI and K. TAKAGI, "Low-frequency noise in GaAs", Jap. J. of Appl. Phys., vol. 29, no 7, pp 1250-1251, 1990.
133. ZHANG X.N., A. VAN DER ZIEL, K.H. DUH and H. MORKOC, "Burst and low-frequency generation-recombination noise in doubleheterojunction bipolar transistors", IEEE Elec. Dev. Left., vol. EDL-5, no 7, pp 277-279, 1984.