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Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 92-97

Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

(6) Pedersen, E V a Jensen, F a Shiryaev, S Yu a,b Petersen, J W a Lundsgaard Hansen, J b Nylandsted Larsen, A b

a TECHNICAL UNIVERSITY OF DENMARK (Denmark)

b AARHUS UNIVERSITY (Denmark)

Author keywords

Atomic force microscopy; Electron microscopy; Epitaxy; Germanium; Growth mechanism; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

SEMICONDUCTOR BUFFER LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032068823 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00454-4 Document Type: Article

Times cited : (2)

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