Ordering of nanoscale InP islands on strain-modulated InGaP buffer layers

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 803-806

  Hausler K ^a   Noll, F ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SURFACE STRUCTURE;

BUFFER LAYERS; DOT ARRANGEMENT; DOT DENSITY; NANOSCALE ISLANDS; ORDERING; PLASTIC STRAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0040794134     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00366-5     Document Type: Article

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