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Applied Physics Letters

Volumn 58, Issue 15, 1991, Pages 1626-1628

Si ultrashallow p+n junctions using low-energy boron implantation

(4) Bousetta, A a Van Den Berg, J A a Armour, D G a Zalm, P C b

a UNIVERSITY OF SALFORD (United Kingdom)

b PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000798107 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.105146 Document Type: Article

Times cited : (31)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.