Characterization of Ultra-Shallow p+-n Junction Diodes Fabricated by 500-eV Boron-Ion Implantation

IEEE Transactions on Electron Devices

Volumn 38, Issue 1, 1991, Pages 28-31

  Hong, Shin Nam ^a   Ruggles, Gary A ^a   Wortman, Jimmie J ^b   Myers, Edward R ^b   Hren, John J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONS - TUNNELING; MASS SPECTROMETRY; SEMICONDUCTING SILICON - ION IMPLANTATION; SUBSTRATES - AMORPHOUS;

CRYSTALLINE SILICON SUBSTRATES; PREAMORPHIZED SILICON SUBSTRATES; ULTRA-SHALLOW JUNCTION DIODES;

SEMICONDUCTOR DIODES;

EID: 0026005371     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.65732     Document Type: Article

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