P-MOSFET‘s with Ultra-Shallow Solid-Phase-Diffused Drain Structure Produced by Diffusion from BSG Gate-Sidewall

IEEE Transactions on Electron Devices

Volumn 40, Issue 12, 1993, Pages 2264-2272

  Saito, Masanobu ^a   Yoshitomi, Takashi ^a   Hara, Hisashi ^a   Ono, Mizuki ^a   Akasaka, Yasushi ^a   Nii, Hideaki ^a   Matsuda, Satoshi ^a   Momose, Hisayo Sasaki ^a   Katsumata, Yasuhiro ^a   Ushiku, Yukihiro ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

DRAIN JUNCTIONS; DRAIN PROFILE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PARASITIC RESISTANCE; SOLID PHASE DIFFUSED DRAIN (SPDD); TRANSCONDUCTANCE DEGRADATION;

MOSFET DEVICES;

EID: 0027811718     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249474     Document Type: Article

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