Increase of parasitic resistance of shallow p+ extension with SiN sidewall process by hydrogen passivation of boron and its improvement by preamorphization for sub-0.25 μm pMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 168-169

  Inaba, S ^a   Murakoshi, A ^a   Tanaka, M ^a   Takagi, M T ^a   Koyama, H ^a   Koike, H ^a   Yoshimura, H ^a   Matsuoka, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HYDROGEN; ION IMPLANTATION; PASSIVATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS;

ACTIVATION EFFICIENCY; DRAIN SATURATION CURRENT; PARASITIC RESISTANCE; SHORT CHANNEL EFFECT; SILICON NITRIDE FILM;

MOSFET DEVICES;

EID: 0029702090     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)