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Journal of Applied Physics

Volumn 64, Issue 2, 1988, Pages 743-748

A model for silicon-oxide breakdown under high field and current stress

(2) Avni, E a Shappir, J a

a HEBREW UNIVERSITY OF JERUSALEM (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549090991 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.342477 Document Type: Article

Times cited : (47)

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