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Volumn , Issue , 1989, Pages 1-8
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Time dependent dielectric breakdown of 210 angstrom oxides
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITORS--FAILURE;
DIELECTRIC MATERIALS--THIN FILMS;
OXIDES--ELECTRIC BREAKDOWN;
SEMICONDUCTOR DEVICES, MOS--FAILURE;
THERMAL EFFECTS;
ACCELERATION PARAMETER;
ACTIVATION ENERGY;
CMOS CAPACITORS;
ELECTRIC FIELD STRESS;
TIME DEPENDENT DIELECTRIC BREAKDOWN;
SILICA;
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EID: 0024867041
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (41)
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References (5)
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