Bimodal lifetime distributions of dielectrics for integrated circuits

Quality and Reliability Engineering International

Volumn 7, Issue 4, 1991, Pages 299-305

  v Sichart, K ^a   Vollertsen, R P ^a  

^a SIEMENS AG   (Germany)

Author keywords

Accelerated testing; Bimodal distributions; Burn in; Constant voltage; Early failures; Reliability; Thin dielectrics; Weibull

Indexed keywords

CAPACITORS; INTEGRATED CIRCUITS--RELIABILITY; VARACTORS--STRESSES;

ACCELERATED TESTING; BIMODAL DISTRIBUTION; EARLY FAILURE MODE; WEIBULL DISTRIBUTION;

DIELECTRIC DEVICES;

EID: 0026187055     PISSN: 07488017     EISSN: 10991638     Source Type: Journal    
DOI: 10.1002/qre.4680070417     Document Type: Article

References (11)

1. 2
2. Electrical breakdown in thin gate and tunneling oxides
3. Lifetime of thin oxide and oxide–nitride–oxide dielectrics within trench capacitors for DRAM's
4. Reliability of 10 nm stacked insulator on polycrystalline silicon in planar and trench capacitors
5. Reliability predictions for integrated circuits from test structure data
6. Charge trapping characteristics of multilayer dielectrics in metal‐insulator semiconductor structures