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Volumn , Issue , 1994, Pages 126-135
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Effects of temperature and defects on breakdown lifetime of thin SiO2 at very low voltages
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECTS;
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRON TRANSPORT PROPERTIES;
MOSFET DEVICES;
OXIDES;
SEMICONDUCTOR DEVICE MODELS;
SILICA;
STATISTICAL TESTS;
THERMAL EFFECTS;
THIN FILMS;
ANODE HOLE INJECTION MODEL;
BREAKDOWN LIFETIME;
CHARGE TO BREAKDOWN TESTS;
STATISTICAL BREAKDOWN DISTRIBUTION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0028257180
PISSN: 00999512
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (38)
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References (35)
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