Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 649-652

  Su, Lisa T ^a   Hu, Hang ^a   Jacobs, Jarvis B ^a   Sherony, Melanie J ^a   Wei, Andy ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THIN FILMS; VOLTAGE MEASUREMENT;

CURRENT DRIVE; SHORT CHANNEL EFFECT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0028746226     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)