Numerical examination of silicon avalanche photodiodes operated in charge storage mode

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 394-400

  Parks Jr , Joseph W ^a   Brennan, Kevin F ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF GEORGIA   (United States)

Author keywords

Avalanche photodiodes; Numerical simulation

Indexed keywords

AVALANCHE DIODES; BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC ENERGY STORAGE; LEAKAGE CURRENTS; NUMERICAL ANALYSIS; OHMIC CONTACTS; PHOTOELECTRICITY; SEMICONDUCTING SILICON;

PHOTOCURRENTS; SELF QUENCHING EFFECTS; SILICON AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0031999186     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658672     Document Type: Article

References (23)

1. T. Ando, M. Yasuda, and K. Sawada, "Noise suppression effect in an avalanche multiplication photodiode operating in a charge accumulation mode," IEEE Trans. Electron Devices, vol. 42, pp. 1769-1774, Oct. 1995.
2. H. Komobuchi and T. Ando, "A novel high-gain image sensor cell based on Si p-n APD in charge storage mode operation," IEEE Trans. Electron Devices, vol. 37, pp. 1861-1868, Aug. 1990.
3. H. Komobuchi, M. Morimoto, and T. Ando, "Operation and properties of a p-n avalanche photodiode in a charge integrating mode," IEEE Electron Device Lett., vol. 10, pp. 189-191, May 1989.
4. E. Possum, "Active pixel sensors: Are CCD's dinosaurs?," SPIE, vol. 1900, pp. 2-14, 1993.
5. T. P. Lester and D. L. Pulfrey, "A new MOS photon-counting sensor operating in the above-breakdown regime," IEEE Trans. Electron Devices, vol. ED31, pp. 1420-1427, Oct. 1984.
6. G. Weckler, "Operation of p-n junction photodetectors in a photon flux integrating mode," IEEE J. Solid-State Circuits, Vol. SC2, pp. 65-73, Sept. 1967.
7. A. W. Smith, "Light confinement and hydrodynamic modeling of semiconductor structures using volumetric techniques," Ph.D dissertation, Georgia Institute of Technology, Atlanta, 1992.
8. J. W. Parks, A. W. Smith, K. F. Brennan, and L. E. Tarof, "Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes," IEEE Trans. Electron Devices, vol. 43, pp. 2113-2121, Dec. 1996.
9. S. Selberherr, Analysis and Simulation of Semiconductor Devices. New York: Springer-Verlag, 1984.
10. S. V. Pantankar, Numerical Heat Transfer and Fluid Flow. New York: Hemisphere Publishing Corp., 1980.
11. T. V Oppe, W. D. Joubert, and D. T Kincard, "An overview of NSPCG: A nonsymmetric preconditioned conjugate gradient package," Computer Physics Comm., vol. 53, pp. 283-292, 1989.
12. W. Kausel, J. O. Nylander, G. Nanz, S. Selberherr, and H. Poetzl, "BAMBI- A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts," Microelectron. J., vol. 21, no. 5, pp. 5-21, 1990.
13. N. Iwamuro and S. Tagami, "Stable calculation for power device simulation with inductive load circuit: Application of an integral method," Microelectron. J., vol. 24, pp. 139-145, 1993.
14. P. A. Basore and D. T. Rover, PC-ID Installation Manual and User's Guide, Iowa State Univ. Res. Foundation, Ames, 1985.
15. P. A. Gough, M. K. Johnson, S. A. Higgins, J. A. G. Slatter, and K. R. Whight, "Two-dimensional simulations of power devices with circuit boundary conditions," NASECODE V, 1987, pp. 213-8, 1987.
16. R. W. Engstrom and R. L. Rodgers, "Camera tubes for night vision," Opt. Spectra, vol. 26-30, pp. 43842, Feb. 1971.
17. H. Melchoir, "Demodulation and photodetection techniques," in Laser Handbook, F. T. Arecchi and E. O. Schultz-Dubois, Eds. Amsterdam, The Netherlands: North Holland, vol. 1, pp. 732, 1972.
18. R. J. Mclntyre, "Recent developments in silicon avalanche photodiodes," Measurement, vol. 3, no. 4, pp. 146-152, 1985.
19. P. P. Webb, R. J. Mclntyre, and J. Conradi, "Properties of avalanche photodiodes," RCA Rev., vol. 35, pp. 234-278, 1974.
20. S. Mendis, S. E. Kemeny, and E. R. Possum, "CMOS active pixel image sensor," IEEE Trans. Electron Devices, vol. 41, pp. 452153, Mar. 1994.
21. P. T. Landsberg, "Trap-auger recombination in silicon of low carrier densities," Appl. Phys. Lett., vol. 50, no. 12, pp. 745-747, Mar. 1987.
22. M. R. Squillante, J. S. Gordon, R. Farrell, S. Vasile, K. Delay, C. Oakes, and K. Vanderpuye, "Recent advances in avalanche photodiode technology," SPIE-X-Ray Detector Physics and Applications II, vol. 2009, pp. 64-71, 1993.
23. P. P. Webb and R. J. Mclntyre, "Multi-element reachthrough avalanche photodiodes," IEEE Trans. Electron Devices, vol. ED31, pp. 1206-1212, Sept. 1984.