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Volumn 31, Issue 10, 1984, Pages 1420-1427

A New MOS Photon-Counting Sensor Operating in the Above-Breakdown Regime

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, CHARGE COUPLED; SEMICONDUCTOR DEVICES, MOS - APPLICATIONS; SENSORS;

EID: 0021501856     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21727     Document Type: Article
Times cited : (6)

References (13)
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  • 2
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    • Photoelectrical properties of spherical avalanche diodes in silicon
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  • 3
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    • Single photon detection with avalanche photodiodes
    • P. P. Webb and R. J. Mclntyre, “Single photon detection with avalanche photodiodes,” Bull. Amer. Phys. Soc. II, vol. 15, p. 813, 1970.
    • (1970) Bull. Amer. Phys. Soc. II , vol.15 , pp. 813
    • Webb, P.P.1    Mclntyre, R.J.2
  • 4
    • 84938015195 scopus 로고
    • The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
    • R. J. Mclntyre, “The distribution of gains in uniformly multiplying avalanche photodiodes: Theory,” IEEE Trans. Electron Devices, vol. ED-19, pp. 703–713, 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 703-713
    • Mclntyre, R.J.1
  • 7
    • 36849130319 scopus 로고
    • Mechanisms contributing to the noise pulse rate of avalanche diodes
    • R. H. Haitz, “Mechanisms contributing to the noise pulse rate of avalanche diodes,” J. Appl. Phys., vol. 36, pp. 3123–3131, 1965.
    • (1965) J. Appl. Phys. , vol.36 , pp. 3123-3131
    • Haitz, R.H.1
  • 8
    • 50549156338 scopus 로고
    • Zener tunneling in semiconductors
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    • (1959) J. Phys. Chem. Solids , vol.12 , pp. 181-188
    • Kane, E.O.1
  • 9
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    • Theory of tunneling
    • E. O. Kane, “Theory of tunneling,” J. Appl. Phys., vol. 32, pp. 83–91, 1961.
    • (1961) J. Appl. Phys. , vol.32 , pp. 83-91
    • Kane, E.O.1
  • 10
    • 0021452655 scopus 로고
    • A new method based on the superposition principle for the calculation of the two-dimensional potential in buried-channel charge-coupled devices
    • T. P. Lester and D. L. Pulfrey, “A new method based on the superposition principle for the calculation of the two-dimensional potential in buried-channel charge-coupled devices,” IEEE Trans. Electron Devices, vol. ED-31, pp. 999–1001, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 999-1001
    • Lester, T.P.1    Pulfrey, D.L.2
  • 11
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    • On the avalanche initiation probability of avalanche diodes above the breakdown voltage
    • R. J. Mclntyre, “On the avalanche initiation probability of avalanche diodes above the breakdown voltage,” IEEE Trans. Electron Devices, vol. ED-20, pp. 637–641, 1973.
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  • 12
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    • An anodic process for forming planar interconnection metallization for multilevel LSI
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    • Schwartz, G.C.1    Platter, V.2
  • 13
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    • Side reactions during the ano- dization of aluminum in a glycol borate electrolyte
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.