Multi-Element Reachthrough Avalanche Photodiodes

IEEE Transactions on Electron Devices

Volumn 31, Issue 9, 1984, Pages 1206-1212

  Webb, Paul P ^a   Mcintyre, Robert J ^a  

^a FCA UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, PHOTODIODE;

REACHTHROUGH AVALANCHE PHOTODIODES; SPECTRAL RESPONSE;

SEMICONDUCTOR DIODES, AVALANCHE;

EID: 0021483040     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21689     Document Type: Article

References (3)

1. P. P. Webb, R. J. McIntyre, and J. Conradi, “Properties of avalanche photodiodes,” RCA Rev., vol. 35, p. 234, June 1974.
2. J. Conradi, “Temperature effects in silicon avalanche diodes,” Solid-Stace Electron., vol. 17, pp. 99–106, 1974.
3. R. Kumar, S. G. Chamberlain, and D. J. Roulston, “Two-dimensional computer simution of the breakdown characteristics of a multi-element avalanche photodiode array,” IEEE Trans. Electron Devices, vol. ED-31, no. 7, pp. 928–933, July 1984.