Recent developments in silicon avalanche photodiodes

Measurement

Volumn 3, Issue 4, 1985, Pages 146-152

  McIntyre, R J ^a  

^a FCA UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006451262     PISSN: 02632241     EISSN: None     Source Type: Journal    
DOI: 10.1016/0263-2241(85)90024-7     Document Type: Article

References (16)

1. The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental
2. Silicon reach-through avalanche photodiodes for fiber-optic applications
3. A semiconductor detector for measuring ultra-weak fluorescence decays with 70ps FWHM resolution
4. High-resolution positron emission tomography using small bismuth germanate crystals and individial photosensors
5. Scintillation detection using large-area silicon avalanche photodiodes
6. Performance characteristics of BGO-silicon avalache photodiode detectors for PET
7. A BGO-avalanche detector module designed for use in high-resolution positron emission tomography
8. Integrating amplifiers using cooled JFETs
9. Multiplication noise in uniform avalanche junctions
10. The distribution of gains in uniformly multiplying avalanche photodiodes Theory
11. On the avalanche initiation probability of avalanche diodes above the breakdown voltage
12. Triggering phenomena in avalanche diodes
13. Scintillation detection with large-area reach-through avalanche photodiodes
14. Properties of avalanche photodiodes
15. Large-area silicon avalanche detectors with enhanced quantum efficiency in the 1.0 to 1.15 μm range
16. Multi-element reach-through avalanche photodiode