Operation and properties of a p-n avalanche photodiode in a charge integrating mode

Electron device letters

Volumn v, Issue n, 1992, Pages 189-191

  Komobuchi, Hiroyoshi ^a   Morimoto, Michihiro ^a   Ando, Takao ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE SENSORS; PHOTOELECTRICITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES, AVALANCHE;

CHARGE STORAGE; PHOTOELECTRIC CONVERSION CURVES;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 34250816397     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)