AMBI - A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts

Microelectronics Journal

Volumn 21, Issue 5, 1990, Pages 5-21

  Kausel, W ^a,b   Nylander, J O ^c   Nanz, G ^d   Selberherr, S ^d   Poetzl, H ^a,b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b LUDWIG BOLTZMANN INSTITUTE FOR LUNG VASCULAR RESEARCH   (Austria)

^c UPPSALA UNIVERSITY   (Sweden)

^d INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS, OHMIC; ELECTRIC NETWORKS - EQUIVALENT CIRCUITS; MATHEMATICAL TECHNIQUES - BOUNDARY VALUE PROBLEMS; SEMICONDUCTOR DEVICES, MESFET - TRANSIENTS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

CURRENT CONTROLLED CONTACTS; SCHOTTKY CONTACTS; SOFTWARE PACKAGE BAMBI; TRANSIENT 2D-MESFET MODEL; TRANSIENT SIMULATOR BAMBI;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025480801     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(90)90014-T     Document Type: Article

References (11)

1. Radiation hardness of a silicon MESFET 4Kx1 sRAM
2. Complementary Si MESFET concept for logic circuits
3. BAMBI — a design model for power MOSFETs
4. BAMBI — a design model for power MOSFETs
5. Basic equations for semiconductor — device operation
6. Finite ☐es — a generalization of the finite-differences method suitable for semiconductor device simulation
7. Large-signal analysis of a silicon read diode oscillator
8. Current transport in medal-semiconductor barriers
9. Recombination velocity effects on current diffusion and imref in Schottky barriers
10. A revised boundary condition for the numerical analysis of Schottky barrier diodes
11. Diffusion of hot and cold electrons in semiconductor barriers