A Novel High-Gain Image Sensor Cell Based on Si p-n APD in Charge Storage Mode Operation

IEEE Transactions on Electron Devices

Volumn 37, Issue 8, 1990, Pages 1861-1868

  Komobuchi, Hiroyoshi ^a   Ando, Takao ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - APPLICATIONS; SEMICONDUCTOR DIODES, AVALANCHE - APPLICATIONS; SEMICONDUCTOR DIODES, PHOTODIODE - APPLICATIONS;

AVALANCHE PHOTODIODES; BREAKDOWN VOLTAGE OPERATION; CHARGE STORAGE MODE OPERATION; HIGH-GAIN IMAGE SENSOR CELL; P-N PHOTODIODES; PHOTOELECTRON CONVERSION CHARACTERISTICS;

IMAGE SENSORS;

EID: 0025476887     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57137     Document Type: Article

References (14)

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