Surface phases of SiC islands grown over Si(111)-(7 × 7) using C60 as a precursor

Surface Science

Volumn 397, Issue 1-3, 1998, Pages

  Pascual, J I ^a   Gomez Herrero J ^a   Baro A M ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Scanning tunneling microscopy (STM); Silicon carbide

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; FULLERENES; LATTICE CONSTANTS; SCANNING TUNNELING MICROSCOPY; THERMAL EFFECTS;

SURFACE PHASES;

SILICON CARBIDE;

EID: 0031988944     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00852-2     Document Type: Article

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