Surface structure of 3C-SiC(111) fabricated by C60 precursor: A scanning tunneling microscopy and high-resolution electron energy loss spectroscopy study

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 938-942

  Hu, C W ^a   Kasuya, A ^a   Suto, S ^a   Wawro, A ^a   Nishina, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544242665     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589179     Document Type: Article

References (11)

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