Surface structure of 3C-SiC(111) grown on Si(111) surface by C60 precursor

Applied Physics Letters

Volumn 68, Issue 9, 1996, Pages 1253-1255

  Hu, C W ^a   Kasuya, A ^a   Suto, S ^b   Wawro, A ^a   Nishina, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002764675     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115943     Document Type: Article

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