Investigation of Quantum Effects in Highly-Doped MOSFET's by Means of a Self-consistent 2D Model

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 399-402

  Spinelli, Alessandro ^a   Benvenuti, Augusto ^b   Pacelli, Andrea ^a  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; QUANTUM ELECTRONICS; CURRENT VOLTAGE CHARACTERISTICS; EIGENVALUES AND EIGENFUNCTIONS; EQUATIONS OF MOTION; ITERATIVE METHODS; MATHEMATICAL MODELS; QUANTUM THEORY;

2-D MODEL; CONTINUITY EQUATIONS; HEAVILY DOPED; INTRINSIC DENSITY; MOSFETS; QUANTUM EFFECTS; QUANTUM MECHANICAL EFFECTS; SCHRODINGER; SELF-CONSISTENCY; TWO DIMENSIONAL MODEL;

MOSFET DEVICES;

CONTINUITY EQUATIONS; POISSON EQUATIONS; QUANTUM EFFECTS; SCHRODINGER EQUATIONS; SELF CONSISTENT TWO DIMENSIONAL MODEL;

EID: 0030396118     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553612     Document Type: Conference Paper

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