Impact of fast interface states on effective mobility of heavily-doped MOSFET's

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 833-836

  Perron, L ^a   Lacaita, A ^a   Guzzetti, S ^a   Bez, R ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MOBILITIES; MOS-FET;

EID: 0344839553     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. G. Sodini, T. W. Ekstedt, and J. L. Moll, Solid-State Electron., vol. 25, pp. 833-841, 1982.
5. D. Chow and K. Wang, IEEE Trans. Electron Devices, vol. ED-33, pp 1299-1304, 1986.