메뉴 건너뛰기




Volumn 13, Issue 12, 1992, Pages 600-602

Dependence of Plasma-Induced Oxide Charging Current on Al Antenna Geometry

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANTENNAS; CAPACITORS; ELECTRIC CURRENT MEASUREMENT; ELECTRODES; PHOTORESISTS; PLASMAS;

EID: 0026993978     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192857     Document Type: Article
Times cited : (42)

References (10)
  • 1
    • 84957462939 scopus 로고
    • Reduced device damage using an ozone based photoresist removal process
    • c. Gabriel and J. c. Mitchener, “Reduced device damage using an ozone based photoresist removal process,” Proc. SPIE, vol. 1086, pp. 598–603, 1989.
    • (1989) Proc. SPIE , vol.1086 , pp. 598-603
    • Gabriel, C.1    Mitchener, J.C.2
  • 2
    • 0024907452 scopus 로고
    • Gate oxide charging and its elimination for metal antenna capacitor and transistor in VLSI CMOS double layer metal technology
    • F. Shone et al., “Gate oxide charging and its elimination for metal antenna capacitor and transistor in VLSI CMOS double layer metal technology,” in Symp. VLSI Tech. Dig. Papers, 1989, pp. 73–74.
    • (1989) Symp. VLSI Tech. Dig. Papers , pp. 73-74
    • Shone, F.1
  • 3
    • 0026867840 scopus 로고
    • Thin-oxide damage from gate charging during plasma processing
    • May
    • S. Fang and J. McVittie, “Thin-oxide damage from gate charging during plasma processing,” IEEE Electron Device Lett., vol. 13, no. 5, pp. 288–290, May 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , Issue.5 , pp. 288-290
    • Fang, S.1    McVittie, J.2
  • 4
    • 0026882443 scopus 로고
    • A model and experiments for thin oxide damage from wafer charging in magnetron plasmas
    • June
    • S. Fang and J. McVittie, “A model and experiments for thin oxide damage from wafer charging in magnetron plasmas,” IEEE Electron Device Lett., vol. 13, no. 6, pp. 347–349, June 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , Issue.6 , pp. 347-349
    • Fang, S.1    McVittie, J.2
  • 5
    • 0346984355 scopus 로고
    • MOS gate insulator breakdown caused by exposure to plasma
    • Inst. Elect. Eng. Japan, Oct.
    • Y. Kawamoto, “MOS gate insulator breakdown caused by exposure to plasma,” in Proc. 1985 Dry Process Symp., Inst. Elect. Eng. Japan, Oct. 1985, pp. 132–137.
    • (1985) Proc. 1985 Dry Process Symp. , pp. 132-137
    • Kawamoto, Y.1
  • 8
    • 0026203864 scopus 로고
    • Thin oxide charging current during plasma etching of aluminum
    • Aug.
    • H. Shin, C.-C. King, T. Horiuchi, and C. Hu, “Thin oxide charging current during plasma etching of aluminum,” IEEE Electron Device Lett., vol. 12, no. 8, pp. 404–406, Aug. 1991.
    • (1991) IEEE Electron Device Lett. , vol.12 , Issue.8 , pp. 404-406
    • Shin, H.1    King, C.C.2    Horiuchi, T.3    Hu, C.4
  • 9
    • 84941445710 scopus 로고    scopus 로고
    • to be published.
    • H. Shin and C. Hu, to be published.
    • Shin, H.1    Hu, C.2
  • 10
    • 0026839218 scopus 로고
    • Thin oxide damage by plasma etching and ashing processes
    • H. Shin, C.-C. King and C. Hu, “Thin oxide damage by plasma etching and ashing processes,” in Proc. IRPS, 1992, pp. 37–41.
    • (1992) Proc. IRPS , pp. 37-41
    • Shin, H.1    King, C.C.2    Hu, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.