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Volumn 18, Issue 6, 1995, Pages 1-33

A deterministic approach to the solution of the BTE in semiconductors

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[No Author keywords available]

Indexed keywords


EID: 51249167887     PISSN: 0393697X     EISSN: 18269850     Source Type: Journal    
DOI: 10.1007/BF02743029     Document Type: Article
Times cited : (17)

References (33)
  • 5
  • 6
    • 0001376374 scopus 로고
    • Distribution functions and ionization rates for hot-electrons in semiconductors
    • (1962) Phys. Rev. , vol.128 , pp. 2507
    • Baraff, G.A.1
  • 7
    • 36149018649 scopus 로고
    • Diffusion of hot and cold electrons in semiconductor barriers
    • (1962) Phys. Rev. , vol.126 , pp. 2002
    • Stratton, R.1
  • 10
    • 84935086501 scopus 로고    scopus 로고
    • Baccarani G., Physics of Submicron Devices, Large Scale Integrated Circuits Technology: State of the Art and Prospect, edited by L. Esaki and G. Soncini (Nijhoff, The Hague) 1982.
  • 11
    • 34250936795 scopus 로고
    • Behandlung von Nichtgleichgewichtsvorgängen mit Hilfe eines Extremal Prinzips
    • (1948) Z. Phys. , vol.124 , pp. 772
    • Kohler, M.1
  • 14
    • 84935052372 scopus 로고    scopus 로고
    • Park Y. J., Tang T. W. and Navon D. H., On the Monte Carlo simulation of bipolar device, Proc. IEDM (1982) 688.
  • 20
    • 35949009958 scopus 로고
    • Monte-Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • (1988) Phys. Rev. B , vol.38 , pp. 9721
    • Fischetti, M.V.1    Laux, S.E.2
  • 25
    • 84935054769 scopus 로고    scopus 로고
    • Gnudi A., Ventura D. and Baccarani G., One-dimensional simulation of a bipolar transistor by means of spherical harmonics expansion of the Boltzmann transport equation, Proceedings of the SISDEP ’91 Conference, September 1991, Zurich, edited by W. Fichtner (1991), p. 205.
  • 29
    • 36449000615 scopus 로고
    • An improved impact-ionization model for high-energy electron transport in Si with Monte Carlo simulation
    • (1991) J. Appl. Phys. , vol.69 , pp. 2300
    • Thoma, R.1
  • 30
    • 84935086198 scopus 로고    scopus 로고
    • Crabbé E. F., Stork J. M. C, Baccarani G. and Fischetti M. V., The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors, Proc. IEDM (1990) 463.
  • 33
    • 84935104696 scopus 로고    scopus 로고
    • Ventura D., Gnudi A. and Baccarani G., Inclusion of electron-electron scattering in the spherical harmonics expansion treatment of the Boltzmann transport equation, Proceedings of the V International Conference on Simulation of Semiconductor Devices and processes (SISDEP-93), Vienna, Austria, September 7–9,1993 (Springer-Verlag) 1993, p. 161.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.