Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 43-44

  Fischetti, M V ^a   Sano, N ^b   Laux, S E ^a   Natori, K ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INTELLIGENT SYSTEMS; MOMENTUM; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES;

COULOMB MATRIX ELEMENTS; DEFORMATION POTENTIAL; ELECTRONS AND HOLES; ENERGY TRANSPORT; FULL BAND MONTE CARLO SIMULATION; MOMENTUM CONSERVATIONS; PSEUDOPOTENTIALS; SPIN ORBIT INTERACTIONS;

IMPACT IONIZATION;

EID: 85034187142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865265     Document Type: Conference Paper

References (11)

1. J. Bude, K. Hess, and G. J. Iafrate, Phys. Rev. B, vol. 45, p. 10958 (1992).
2. N. Sano and A. Yoshii, Phys. Rev. B, vol. 45 p. 4171 (1992).
3. M. V. Fischetti and S. E. Laux, Phys. Rev. B, vol. 38, p. 9721 (1988).
4. P. D. Yoder and K. Hess, Semicond. Sci. Technol., vol. 9, p. 852 (1994).
5. E. Cartier, M. V. Fischetti, E. A. Eklund, and F. R. McFeely, Appl. Phys. Lett., vol. 62, p. 3339 (1993).
6. M. V. Fischetti, S. E. Laux, and E. Crabbe, J. Appl. Phys., vol. 78, p. 1058 (1995).
7. E. O. Kane, Phys. Rev., vol. 159, p. 624 (1967).
8. N. Sano and A. Yoshii, J. Appl. Phys., vol. 77, p. 2020 (1995).
9. M. V. Fischetti, IEEE Hans. Electron Devices, vol. 38 p. 634 (1991).
10. M. Costato and L. Reggiani, Phys. Status Solidi (b), vol. 58, p. 471 (1983).
11. J. D. Wiley, Solid State Comm., vol. 8, p. 1865 (1970).