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Volumn 16, Issue 12, 1997, Pages 1431-1438

Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography

Author keywords

Nonplanar topography; Photo lithography; Resist development; Resist exposure; Rigorous electromagnetic scattering; Three dimensional simulation

Indexed keywords

COMPUTER SIMULATION; FLOWCHARTING; LIGHT SCATTERING; MASKS; MATHEMATICAL MODELS; PHOTORESISTS;

EID: 0031349516     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.664225     Document Type: Article
Times cited : (14)

References (21)
  • 6
    • 0029403880 scopus 로고    scopus 로고
    • 3-D time-domain finitedifference electromagnetic simulation for photolithographic applications," IEEE Trans. Semiconduct. Manufact., vol. 8, pp. 419131, Nov. 1995.
    • A.K. Wong and A.R. Neureuther, "Rigorous 3-D time-domain finitedifference electromagnetic simulation for photolithographic applications," IEEE Trans. Semiconduct. Manufact., vol. 8, pp. 419131, Nov. 1995.
    • And A.R. Neureuther, "Rigorous
    • Wong, A.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.