Development of Positive Photoresist

IEEE Transactions on Electron Devices

Volumn 31, Issue 12, 1984, Pages 1730-1736

  Kim, Deok Jung ^a   Oldham, William G ^a   Neureuther, Andrew R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84941500124     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21779     Document Type: Article

References (12)

1. F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw “Characterization of positive photoresist,” IEEE Trans. Electron Devices, vol. ED-22, no. 7, pp. 445–452, July 1975.
2. K. L. Konnerth and F. H. Dill “In situ measurement of dielectric thickness during etching or developing process,” IEEE Trans. Electron Devices, vol. ED-22, no. 7, pp. 452–456, July 1975.
3. A. R. Neureuther, “Resist profile quality and linewidth control,” in Silicon Processing, D. C. Gupta, Ed. ASTM Special Technical Pub. 804, 1983, pp. 108–124.
4. D. C. Hofer, C. G. Wilson, A. R. Neureuther, and M. Hakey “Characterization of the ‘induction effect’ at mid UV exposure: Application to AZ2400 at 313 nm,” SPIE Optical Microlithography, vol. 334, pp. 196–205, 1982.
5. F. H. Dill and J. M. Shaw, “Thermal effects on the photoresist AZ1350J,” IBM J. Res. Develop., May 1977.
6. D. J. Kim, W. G. Oldham, and A. R. Neureuther, “Characterization and modeling of a resist with built-in induction effect,” in Proc. Kodak Microelectronics Seminar (San Diego, CA), pp. 112–116, Nov. 1983.
7. A. Brochet, G. M. Dubroeucq, and M. Lacombat, “Modelisation des processus dexposition et de development d'une ressine photo-sensible sensible positive: Application au masquage par projection,” Revue Technique Thomson-CSF, vol. 9, no. 2, June 1977.
8. J. Pacansky and J. Lyrea, “Photochemical decomposition mechanisms for AZ-type photoresists,” IBM J. Res. Develop., pp. 24–42, 42, 1979.
9. M. Exterkamp, W. Wong, H. Damar, A. R. Neureuther, and W. G. Oldham, “Resist characterization: Procedures, parameters and profiles,” SPIE Optical Microlithography, vol. 334, 1982.
10. D. J. Kim, W. G. Oldham, and A. R. Neureuther, “Characterization of resist development: Models, equipment, method, and experimental results,” in Proc. Kodak Microelectronics Seminar (San Diego, CA), pp. 100–104, Oct. 1982.
11. M. Hatzakis, B. J. Canavello, and J. M. Shaw, “Single-step optical lift-off process,” IBM J. Res. Develop., vol. 24, no. 1980.
12. R. M. Halverson, M. W. Maclntyre, and W. T. Motsiff, “The mechanism of single-step liftoff with chlorobenzene in a Diazo-type resist,” IBM J. Res. Develop., vol. 26, no. 5, Sept., 1982.