A high performance 16 Mb DRAM using giga-bit technologies

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 2064-2069

  Jeong, Gi Tae ^a   Lee, Kyu Chan ^a   Ha, Dae Won ^a   Lee, Kyu Hyun ^a   Kim, Kyung Hoon ^a   Kim, Il Gu ^a   Kim, Do Hyung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; TANTALUM COMPOUNDS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); SHALLOW TRENCH ISOLATION (STI);

RANDOM ACCESS STORAGE;

EID: 0031276314     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641385     Document Type: Article

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