Low voltage high speed circuit designs for giga-bit DRAMs

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1996, Pages 104-105

  Lee, K C ^a   Kim, C H ^a   Yoo, D Y ^a   Sim, J H ^a   Lee, S B ^a   Moon, B S ^a   Kim, K Y ^a   Kim, N J ^a   Yoo, S M ^a   Yoo, J H ^a   Cho, S I ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; AMPLIFIERS (ELECTRONIC); CAPACITANCE; CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT CONTROL; FLIP FLOP CIRCUITS; LITHOGRAPHY; MOSFET DEVICES; RANDOM ACCESS STORAGE;

CHARGE AMPLIFYING BOOSTED SENSING; CROSS COUPLED CURRENT MIRROR; CURRENT SENSE AMPLIFIER; DYNAMIC RANDOM ACCESS MEMORY; LOW VOLTAGE HIGH SPEED CIRCUITS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0029702250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)