Well concentration: a novel scaling limitation factor derived from DRAM retention time and its modeling

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 915-918

  Hamamoto, T ^a   Sugiura, S ^a   Sawada, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELDS; ELECTRONS; EPITAXIAL GROWTH; IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSISTORS;

IONIZATION ENERGY; RETENTION TIME DISTRIBUTION; THERMAL EMISSION RATE; THERMIONIC FIELD EMISSION CURRENT; TUNNELING EFFECTS;

RANDOM ACCESS STORAGE;

EID: 0029490113     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)