A Three-Step Method for the De-Embedding of High-Frequency S-Parameter Measurements

IEEE Transactions on Electron Devices

Volumn 38, Issue 6, 1991, Pages 1371-1375

  Cho, Hanjin ^a   Burk, Dorothea E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTING SILICON;

DEEMBEDDING; DEVICE-UNDER-TEST (DUT); S-PARAMETER MEASUREMENTS;

TRANSISTORS, BIPOLAR;

EID: 0026171562     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81628     Document Type: Article

References (12)

1. J. van der Beisen, “A simple regional analysis of transit times in bipolar transistors,” Solid-State Electron., vol. 29, pp. 529–534, 1986.
2. J. E. Lary and R. L. Anderson, “Effective base resistance of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2503–2505, 1985.
3. P. J. van Wijnen and L. C. Smith, “High-frequency characterization of small geometry bipolar transistors,” in Proc. IEEE Bipolar Circuits and Technology Meet. (Minneapolis, MN), Sept. 1988, pp. 91–94.
4. HP Application Note 95–1, “S-parameter techniques for faster, more accurate network representation.”
5. T. C. Chen, et. al., “A submicrometer high-performance bipolar technology,” IEEE Electron Device Lett., vol. 10, pp. 364–366, 1989.
6. T. Hamasaki et. al., “Lateral scaling effects on high-current transients in submicrometer bipolar transistor,” IEEE Trans. Electron Devices, vol. 35, pp. 1620–1626, 1988.
7. A. Fraser, R. Gleason, and E. W. Strid, “GHz on-silicon wafer probing calibration methods,” in Proc. IEEE. 1988 Bipolar Circuits and Technology Meet (Minneapolis, MN), Sept. 1988, pp. 91–94.
8. P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, “A new straightforward calibration and correction procedure for “on wafer” high-frequency s-parameter measurements (45 MHz-18 GHz),” in Proc. IEEE 1987 Bipolar Circuits and Technology Meet. (Minneapolis MN), Sept. 1987.
9. R. Vaitkus, “Realistic small-signal parameter extraction methods for microwave transistors,” presented at GaAs Microwave Monolithic Integrated Circuits (MMICs) and Radar Cross Section (RCS) Workshop, Arizona State University, Tempe, AZ, Apr. 11, 1988.
10. HP 8510 Network Analyzer System Operating and Programming Manual. Santa Rosa, CA: Hewlett-Packard Corp., 1985.
11. R. Vaitkus, Motorola, Inc., private communication about MAESTRO.
12. M. Jo and D. E. Burk, “A multi-regional small-signal model derived from the charge-based large-signal bipolar transistor model,” in Proc. 1988 IEEE Bipolar Circuits and Technology Meet., 1988, pp. 111–113.