Influence of Impact-Ionization-Induced Base Current Reversal on Bipolar Transistor Parameters

IEEE Transactions on Electron Devices

Volumn 42, Issue 9, 1995, Pages 1636-1646

  Vendrame, Loris ^a   Zabotto, Enrico ^a   Zanini, Alessandro ^a   Zanoni, Enrico ^a   Verzellesi, Giovanni ^a   Dal Fabbro, Alessandro ^b   Chantre, Alain ^c   Pavan, Paolo ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c ORANGE LABS   (France)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; IONIZATION; MATHEMATICAL MODELS; MEASUREMENT ERRORS; MODULATION; MOS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

COLLECTOR PARASITIC RESISTANCE; CURRENT-CROWDING; IMPACT-IONIZATION EFFECTS;

BIPOLAR TRANSISTORS;

EID: 0029378954     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405278     Document Type: Article

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