An integrated CMOS distributed amplifier utilizing packaging inductance

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 10 PART 2, 1997, Pages 1969-1976

  Sullivan, Patrick J ^a   Xavier, Bernard A ^a   Ku, Walter H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Cmos integrated circuits; Distributed amplifiers; Microwave fet amplifiers; Mosfet amplifiers; Packaging; Waveguide components

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONICS PACKAGING; MESFET DEVICES; MICROWAVE CIRCUITS; WAVEGUIDE COMPONENTS;

PACKAGING INDUCTANCE;

MICROWAVE AMPLIFIERS;

EID: 0031246727     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.641806     Document Type: Article

References (22)

1. W. S. Pervival, British Patent 460 562, July 1936.
2. T. T. Y. Wong, Fundamentals of Distributed Amplification. Norwood, MA: Artech House, 1993.
3. F. Schar, "Distributed MOSFET amplifier using microstrip," Int. J. Electron., vol. 34, pp. 721-730, 1973.
4. D. Eggert, W. Barthel, W. Budde, H. J. Jentschel, R. Richter, and F. Sawade, "CMOS-microwave wideband amplifiers and mixers on SIMOX-substrates," in European Solid-State Circuits Conf., Lille, France, Sept. 1995, pp. 302-305.
5. P. J. Sullivan, B. A. Xavier, D. Costa, and W. H. Ku, "Silicon MOSFET distributed amplifier," Electron. Lett., vol. 32, no. 12, p. 1106, June 1996.
6. S. P. Voinigescu, S. W. Tarasewicz, T. MacElwee, and J. Ilowski, "An assessment of state-of-the-art 0.5 /j,m bulk CMOS technology for RF applications," 1EDM, pp. 721-724, 1995.
7. N. M. Nguyen and R. G. Meyer, "Si IC-compatible inductors and EC passive filters," IEEE J. Solid-State Circuits, vol. 25, pp. 1028-1031, Aug. 1990.
8. K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, and S. Moinian, "High Q inductors for wireless applications in a complementary silicon bipolar process," IEEE J. Solid-State Circuits, vol. 31, pp. 4-9, Jan. 1996.
9. J. N. Burghartz, M. Soyuer, and K. A. Jenkins, "Microwave inductors and capacitors in standard multilevel interconnect silicon technology," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 100-104, Jan. 1996.
10. E. Zu, E. Yicheng, R. C. Frye, M. Y. Eau, and S.-C. S. Chen, "High Q-factor inductors on MCM Si substrates," IEEE Trans. Comp., Packag., Manufact. Technol. B., vol. 19, pp. 635-643, Aug. 1996.
11. M. Case et al., "High performance microwave elements for SiGe MMIC's," in Proc. IEEE/Cornell Conf. Advanced Concepts High-Speed Semiconductor Devices Circuits, New York, NY, Aug. 1995, pp. 85-92.
12. J. Y.-C. Chang, A. A. Abidi, and M. Gaitan, "Earge suspended inductors on Silicon and their use in a 2-ftm CMOS RF amplifier," IEEE Electron Device Lett., vol. 14, pp. 246-248, May 1993.
13. P. R. Gray and R. G. Meyer, "Future directions in Silicon 1C's for RF personal communications," in IEEE Custom Integrated Circuits Conf., Santa Clara, CA, May 1995, pp. 83-90.
14. N. Camilleri, J. Kirchgessner, J. Costa, D. Ngo, and D. Eovelace, "Bonding pad models for Silicon VESI technologies and their effects on the noise figure of RF NPN's," in IEEE Millimeter-Wave Monolithic Circuits Symp., San Diego, CA, May 1994, pp. 225-228.
15. Y. Ayasli, R. E. Mozzi, J. E. Vorhaus, E. D. Reynolds, and R. A. Pucel, "A monolithic GaAs 1-13 GHz traveling-wave amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 976-981, July 1982.
16. C. S. Aitchison, "The intrinsic noise figure of the MESFET distributed amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp. 460-466, June 1985.
17. J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Norman, and G. K. Hohenwarter, "MESFET distributed amplifier guidelines," IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 268-275, Mar. 1984.
18. A. Van der Ziel, "Thermal noise in field effect transistors," in Proc. IRE, vol. 50, pp. 1808-1812, Aug. 1962.
19. Gate noise in field effect transistors at moderately high frequencies," in Proc. IEEE, vol. 51, pp. 461-4167, Mar. 1963.
20. Noise in Solid State Devices and Circuits. New York: Wiley, 1986.
21. A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801-1805, Nov. 1986.
22. D. K. Shaeffer and T. H. Eee, "A 1.5-V, 1.5-GHz CMOS low-noise amplifier," IEEE J. Solid-State Circuits, vol. 32, pp. 745-759, May 1997.