Bonding pad models for silicon VLSI technologies and their effects on the noise figure of RF NPNs

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1994, Pages 225-228

  Camilleri, Natalino ^a   Kirchgessner, Jim ^a   Costa, Julio ^a   Ngo, David ^a   Lovelace, David ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; EMITTER COUPLED LOGIC CIRCUITS; INTERFACES (MATERIALS); MICROPROCESSOR CHIPS; MOBILE TELECOMMUNICATION SYSTEMS; SEMICONDUCTING SILICON; SIGNAL RECEIVERS; SIGNAL TO NOISE RATIO; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSISTORS; VLSI CIRCUITS;

BONDING PAD MODELS; NOISE FIGURES; NPN TRANSISTORS; RADIOFREQUENCY RECEIVERS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0027990097     PISSN: 00748587     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)