MESFET Distributed Amplifier Design Guidelines

IEEE Transactions on Microwave Theory and Techniques

Volumn 32, Issue 3, 1984, Pages 268-275

  Beyer, James B ^a   Prasad, S N ^a   Becker, Robert C ^a   Nordman, James E ^a   Hohenwarter, Gert K ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

DISTRIBUTED AMPLIFIER; FREQUENCY RESPONSE; MAXIMUM GAIN-BANDWIDTH PRODUCT; METAL SEMICONDUCTOR FET(MESFET);

AMPLIFIERS, MICROWAVE;

EID: 0021388894     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1984.1132664     Document Type: Letter

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