A Monolithic GaAs 1–13-GHz Traveling-Wave Amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 30, Issue 7, 1982, Pages 976-981

  Ayasli, Yalcin ^a   Mozzi, Robert L ^a   Vorhaus, James L ^a   Reynolds, Leonard D ^a   Pucel, Robert A ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT;

DISTRIBUTED AMPLIFICATION; TRAVELING-WAVE AMPLIFIER;

AMPLIFIERS, MICROWAVE;

EID: 0020152768     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1982.1131186     Document Type: Article

References (5)

1. E. L. Ginzton, W. R. Hewlett, J. H. Jasburg, and J. D. Noe, “Distributed amplification,” in Proc. IRE, vol. 36, pp. 956-969, 1948.
2. W. Jutzi, “A MESFET distributed amplifier with 2-GHz bandwidth,” in Proc. IEEE, vol. 57, pp. 1195-1196, 1969.
3. Y. Ayasli, J. L. Vorhaus, R. Mozzi, and L. Reynolds, “Monolithic GaAs traveling-wave amplifier,” Electron. Lett. vol. 17, p. 12, 1981.
4. Y. Ayasli, R. Mozzi, J. L. Vorhaus, L. Reynolds, R. A. Pucel, “A monolithic GaAs 1 to 13 GHz travelling-wave amplifier,” presented at GaAs IC Symp. (San Diego, CA), Oct. 27-29, 1981.
5. Y. Ayasli, “Monolithic GaAs travelling-wave amplification at microwave frequencies,” presented at 8th Biennial Conf. Active Microwave Semiconductor Devices and Circuits, (Cornell University), Aug. 11-13, 1981.