Experimentally-based analytical model of deep-submicron ldd pmosfet's in a bi-mos hybrid-mode environment

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1473-1482

  Rofail, Samir S ^a   Seng, Yeo Kiat ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTOR DEVICE MODELS;

BODY INDUCED BARRIER LOWERING (BIBL) EFFECTS;

MOSFET DEVICES;

EID: 0031237180     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622604     Document Type: Article

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