An Efficient Semi-Empirical Model of the I-V Characteristics for LDD MOSFET's

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1691-1702

  Chung, Steve Shao Shiun ^a   Lin, Tzang Si ^a   Chen, Yuh Gong ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--DOPING;

LIGHTLY DOPED DRAIN MOSFET; MOSFET I/V CURVES; NONUNIFORMLY DOPED SUBSTRATE; SMALL-GEOMETRY EFFECT; SPICE LEVEL3 MOS NODE; THRESHOLD VOLTAGE MODEL;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024733146     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34231     Document Type: Article

References (18)

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